PART |
Description |
Maker |
A3187ELT A3187EUA A3187LLT A3187LT UGN3175SUA A318 |
HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION 霍尔效应锁存器的高温作业 SENSOR IC 5CH 5V 5MA SGL 28-SSOP Hall-Effect Latch For High-Temperature Operation(工作于高温的霍尔效应锁存 Hall-effect latche for high-temperature operation
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Allegro MicroSystems, Inc. ALLEGRO[Allegro MicroSystems]
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3516 A3515LUA. |
RATIOMETRICLINEAR ALL-EFFECT SENSORS FOR IG -TEMPERATURE OPERATION Ratiometric Linear Hall-Effect Sensors for High-Temperature Operation
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Allegro MicroSystems, Inc.
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MBM29DL321TD-80 MBM29DL321TD-80PBT MBM29DL321TD-80 |
FLASH MEMORY 32M (4M x 8/2M x 16) BIT Dual Operation CMOS 32M (4M x 8/2M x16) bit dual operation
|
Fujitsu Microelectronics
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A3121UA A3121LUA A3121EU A3123LUA 3122 3121 A3123U |
HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION Hall Effect switch For High-Temperature Operation(工作于高温的霍尔效应开 HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION 霍尔效应开关高温作 Audio CODEC IC; IC Function:Audio Codec; Package/Case:28-SSOP; Interface Type:Serial; Leaded Process Compatible:No; No. of Bits:24; Peak Reflow Compatible (260 C):No; Mounting Type:Surface Mount RoHS Compliant: No 霍尔效应开关高温作 KPT 18C 18#20 PIN PLUG 霍尔效应开关高温作
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ALLEGRO[Allegro MicroSystems] Allegro MicroSystems, Inc.
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AM29DL800BB120FI AM29DL800BB90SEB AM29DL800BT90SEB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 1M X 8 FLASH 3V PROM, 120 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).0伏的CMOS只,同时作业快闪记忆
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Advanced Micro Devices, Inc. http://
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285D07 285D126X0250F2 285D126X9250C0 285D126X9250C |
Tantalum-Cased-Tantalum Sintered Anode TANTALEX㈢ Capacitors for Operation to 125 ∑C Tantalum-Cased-Tantalum Sintered Anode TANTALEX? Capacitors for Operation to 125 °C Tantalum-Cased-Tantalum Sintered Anode TANTALEX庐 Capacitors for Operation to 125 掳C Tantalum-Cased-Tantalum Sintered Anode TANTALEX垄莽 Capacitors for Operation to 125 隆?C
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Vishay Siliconix
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JANS1N4959DUS JANS1N4966DUS CD74HC280MTE4 JANS1N66 |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 50μA低电流操作,低反向漏,低噪声稳压二极管(250μA工作电流,小反向漏电流,低噪声,齐纳二极管) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 4.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
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Microsemi Corporation Microsemi, Corp. MICROSEMI CORP-SCOTTSDALE MICROSEMI CORP-LAWRENCE
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EPC1064 EPC1 EPC1213 EPC1441 EPC1441XXX EPC1064PC8 |
Configuration devices for SRAM-based LUT devices, 440,800 1-bit device with 5.0-V or 3.3-V operation Configuration devices for SRAM-based LUT devices, 65,536 1-bit device with 3.3-V operation Configuration devices for SRAM-based LUT devices, 65,536 1-bit device with 5.0-V operation Configuration devices for SRAM-based LUT devices, 212,942 1-bit device with 5.0-V operation
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Altera Corporation List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
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XA3SD1800A XA3SD3400A DS705 |
XA Spartan-3A DSP Automotive FPGA Family Data Sheet Integrated adder for complex multiply or multiply-add operation Integrated adder for complex multiply or multiply-add operation
|
Xilinx, Inc
|
MBM29DL16XBD-90 MBM29DL16XTD-70 MBM29DL16XTD-90 MB |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation
|
Fujitsu Microelectronics
|