PART |
Description |
Maker |
2SK3022TENTATIVE |
2SK3022 (Tentative) - N-Channel Power F-MOS FET Power F-MOS FETs
|
Matsshita / Panasonic
|
IRF450 IRF451 IRF452 IRF252 IRF250 IRF251 |
N-CHANNE POWER MOSFETS
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
|
P0430WQLB-T |
Tentative Product Specification
|
AZ Displays
|
P0340WQLB-T |
Tentative Product Specification
|
AZ Displays
|
G121X1-L03 |
TFT LCD Tentative Specification
|
AZ Displays
|
2SA679 2SA680 |
SILICON PNP EPITAXIAL MESA TRANSISTOR (TENTATIVE)
|
List of Unclassifed Manufacturers ETC[ETC]
|
TC55NEM208AFTN70 TC55NEM208A TC55NEM208AFPN TC55NE |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
TC58DVG02A1FT00 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS 512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|