| PART |
Description |
Maker |
| MJ13333_D ON1977 MJ13333 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400-500 VOLTS 175 WATTS
From old datasheet system
20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS
|
ON Semiconductor
Motorola, Inc
|
| MJW16206 |
POWER TRANSISTORS 12 AMPERES 1200 VOLTS - VCES 50 and 150 WATTS 12 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| 2N3792 2N3789 2N3790 2N3791 |
POWER TRANSISTORS(10A/150W)
POWER TRANSISTORS(10A150W)
POWER TRANSISTORS(10A,150W)
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION
|
MOSPEC[Mospec Semiconductor]
|
| PDTD123YT215 |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| PDTB113ZT215 PDTB113ZT |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| DDTB122LC-7-F DDTB142JC DDTB142TC DDTB122LC2 DDTB1 |
Prebiased Transistors
PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
Diodes, Inc.
|
| PDTB123Y PDTB123YK |
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
|
NXP Semiconductors
|
| 2PD602ARL |
50 V, 500 mA NPN general-purpose transistors
|
Nexperia
|
| PDTD123E PDTD123EK PDTD123ES PDTD123ET PDTD123E-15 |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k楼?, R2 = 2.2 k楼?
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
|
NXP Semiconductors
|
