PART |
Description |
Maker |
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
|
BLF521-15 BLF521-2015 |
UHF power MOS transistor
|
Quanzhou Jinmei Electro...
|
BLF521 |
UHF power MOS transistor
|
New Jersey Semi-Conduct...
|
BLF544B |
UHF push-pull power MOS transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BLF548 |
UHF push-pull power MOS transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BLF546-2015 |
UHF push-pull power MOS transistor
|
Quanzhou Jinmei Electro...
|
3SK135A 3SK135A-T1 3SK135A-KS 3SK135A-T2 |
For UHF TV tuner high frequency amplification RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
NEC
|
BLW898 |
UHF linear power transistor UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
2SK2974 SK2974 |
RF POWER MOS FET(VHF/UHF power amplifiers) From old datasheet system MITSUBISHI RF POWER MOS FET
|
Mitsubishi Electric Semiconductor
|
BLF2022-40 |
UHF power LDMOS transistor UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V. Philips Semiconductors
|