| PART |
Description |
Maker |
| FC807 |
High-Speed Switching Composite Diode Anode Common
|
SANYO[Sanyo Semicon Device]
|
| RT3K66M |
Composite Transistor For high speed switching Silicon N-channel MOSFET
|
Isahaya Electronics Corporation
|
| RT3J55M |
Composite Transistor For high speed switching Silicon P-channel MOSFET
|
Isahaya Electronics Corporation
|
| DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode
Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage High Speed Switching Applications
|
TOSHIBA
|
| XP01112 XP1112 XP01112XP1112 |
XP01112 (XP1112) - Composite Transistors
SILICON PNP EPITAXIAL PLANER TRANSISTOR
Composite Device - Composite Transistors
|
PANASONIC[Panasonic Semiconductor]
|
| ACT-F1288N ACT-F1288N-150P7T ACT-F1288N-150P7Q ACT |
High speed 1 Megabit monolithic FLASH. Speed 150ns.
High speed 1 Megabit monolithic FLASH. Speed 90ns.
High speed 1 Megabit monolithic FLASH. Speed 70ns.
ACT-F128K8 High Speed 1 Megabit Monolithic FLASH
High speed 1 Megabit monolithic FLASH. Speed 60ns.
High speed 1 Megabit monolithic FLASH. Speed 120ns.
|
AEROFLEX[Aeroflex Circuit Technology]
|
| RD0106T-H RD0106T-TL-H RD0106T12 |
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
|
Sanyo Semicon Device
|
| RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| BAS678 |
High-speed diode 0.3 A, 100 V, SILICON, SIGNAL DIODE
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BAW62 BAW62_2 BAW62/A52R |
DIODE KLEINSIGNAL
From old datasheet system
High-speed diode
|
PHILIPS[Philips Semiconductors]
|
