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APT1001RBLC - POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT1001RBLC_270077.PDF Datasheet

Part No.

APT1001RBLC APT1001RSLC APT1001

Description

POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size

34.77K / 2 Page

Maker

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.

JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: APT1001RBN

Maker: APT

Pack:

Stock: Reserved

Unit price for :

50: $1.59

100: $1.51

1000: $1.43

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Full text search : POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Product Description search : POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Related Part Number

PART	Description	Maker
APT1001RBVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 1000V 11A 1.000 Ohm	Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
APT1002R4BN APT1002RBN	POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	ADPOW[Advanced Power Technology]
APT1001R1HVR	POWER MOS V 1000V 9A 1.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.	ADPOW[Advanced Power Technology]
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APT10078BLL APT10078SLL	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代 POWER MOS 7 1000V 14A 0.780 Ohm	Advanced Power Technology, Ltd. Advanced Power Technology Ltd.
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APT10025PVR	Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 33A 0.250 Ohm	Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
APT10025JVR	Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 34A 0.250 Ohm	Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
APT10050B2VFR APT10050LVFR	21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS V 1000V 21A 0.500 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.	Advanced Power Technology Ltd.
APL1001J	POWER MOS IV 1000V 18.0A 0.60 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
APT10035B2FLL APT10035LFLL	POWER MOS 7 1000V 28A 0.350 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No	Advanced Power Technology Ltd.
APT1001RBN	LJT 56C 48#20 8#16 PIN RECP N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV 1000V 11.0A 1.00 Ohm	Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]

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