| PART |
Description |
Maker |
| MAX3537UTC |
Broadband Variable-Gain Amplifiers
|
MAXIM - Dallas Semiconductor
|
| AD605-EB AD605ACHIPS AD605AR-REEL AD605AR-REEL7 AD |
Accurate, Low Noise, Dual Channel Linear-In-dB Variable Gain Amplifier, Optimized For Any Application Requiring High Performance
Dual, Low Noise, Single-Supply Variable Gain Amplifier
|
http://
Analog Devices, Inc.
ANALOG DEVICES INC
|
| MAX2057ETXD MAX2057ETXTD |
1700MHz to 2500MHz Variable-Gain Amplifier with Analog Gain Control
|
Maxim Integrated Products
|
| EL4451 EL4451CN EL4451CS |
Wideband Variable-Gain Amplifier, Gain of 2
|
Intersil Corporation
|
| EL4451 |
Wideband Variable-Gain Amplifier/ Gain of 2
|
Elantec Semiconductor
|
| 5962-9457201MEA 5962-9457202MEA |
Dual , Low Noise, Wideband Variable Gain Amplifier, 0 dB To 40 dB Gain
Dual, Low Noise, Wideband Variable Gain Amplifier, -10 dB To 30 dB Gain
|
Analog Devices
|
| BFS482 Q62702-F1573 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 313E HMC313 HMC313E HMC31309 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6 GHz
|
Hittite Microwave Corporation
|
| HMC313 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| HMC6187LP4E |
VARIABLE GAIN AMPLIFIER
|
Hittite Microwave Corporation
|
| 2AM2105S 2AM2121S 2AM0921S 2AM0405S 2AM0905S |
Variable Gain Amplifier
|
RFHIC
|
