PART |
Description |
Maker |
M67781L 67781L M67781 |
135-160MHz, 12.5V, 40W, FM MOBILE RADIO From old datasheet system 135-160MHz / 12.5V / 40W / FM MOBILE RADIO
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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APTGF100A120TG |
Phase leg NPT IGBT Power Module 135 A, 1200 V, N-CHANNEL IGBT
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Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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NCP2809BDMR2G NCP2809A |
GT 19C 19#12 SKT RECP NOCAP 135 mW Stereo Headphone Power Amplifier 0.131 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO10 NOCAP 135 mW Stereo Headphone Power Amplifier NOCAP 135毫瓦立体声耳机功率放大
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ON Semiconductor
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RA07M1317M RA07M1317M-01 RA07M1317M-E01 |
135-175MHz 6.5W 7.2V 2 Stage Amp. For PORTABLE RADIO 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO 135-175MHz 6.5W 7.2V/ 2 Stage Amp. For PORTABLE RADIO GIGATRUE 550 CAT6 PATCH 6 FT, NON BOOT, PURPLE
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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NCP280906 NCP2809ADMR2G NCP2809BDMR2G NCP2809 NCP2 |
NOCAP 135 mW Stereo Headphone Power Amplifier
|
ONSEMI[ON Semiconductor]
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BLF6G27LS-135 BLF6G27-135 |
Product description135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. WiMAX power LDMOS transistor BLF6G27LS-135<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF6G27LS-135<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
|
STB28NM50N |
N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in D2PAK package
|
ST Microelectronics
|
STFI28N60M2 STF28N60M2 |
N-channel 600 V, 0.135 typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages
|
STMicroelectronics
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MJ16010 MJ16012 MJW16012 MJW16010 ON1985 |
15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-204AA 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247AE NPN SILICON POWER TRANSISTORS 15 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247AE From old datasheet system
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
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ADP121-ACBZ29R7 ADP121-ACBZ30R7 ADP121-ACBZ33R7 AD |
2.775 V FIXED POSITIVE LDO REGULATOR, 0.135 V DROPOUT, PBGA4 150 mA, Low Quiescent Current, CMOS Linear Regulator 1.6 V FIXED POSITIVE LDO REGULATOR, 0.135 V DROPOUT, PBGA4 0.40 MM PITCH, ROHS COMPLIANT, WLCSP-4 1.55 V FIXED POSITIVE LDO REGULATOR, 0.135 V DROPOUT, PBGA4 0.40 MM PITCH, ROHS COMPLIANT, WLCSP-4 1.65 V FIXED POSITIVE LDO REGULATOR, 0.135 V DROPOUT, PBGA4 0.40 MM PITCH, ROHS COMPLIANT, WLCSP-4
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ANALOG DEVICES INC Analog Devices, Inc.
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STP26NM60N |
N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
|
STMicroelectronics
|
LBT16010 |
160MHz SAW Filter 8.5MHz Bandwidth
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http:// SIPAT Co,Ltd
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