| PART |
Description |
Maker |
| ST90E27 ST90E28 ST90T27 ST90T28 |
16K EPROM HCMOS MCUS WITH RAM
|
STMicroelectronics
|
| 24AA1603 24LC16B 24AA16-I/MS 24AA16-I/MSG 24AA16-I |
16K I2C垄芒 Serial EEPROM
16K I2C?/a> Serial EEPROM
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C™ compatible 2-wire serial interface bus. The 24LC16B features hardware write protect, Schmitt trigger in
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C™ ...
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I<SUP>2</SUP>C™ ...
16K I2C Serial EEPROM
|
Microchip Technology Inc.
|
| ST72T371N4B1 ST72T371N4T1 ST72371N4B1 ST72372J4B1 |
8-BIT MCUs WITH 16K ROM/OTP/EPROM,512 BYTES RAM, ADC, DAC (PWM), TIMER, I2C AND SCI
|
STMicroelectronics
|
| ULS-2004R-883 ULS-2014R-883 ULS-2024R-883 ULS-2003 |
Single inverter
ST72E311/ST72T311 - 8-BIT MCU WITH 8 TO 16K OTP/EPROM, 384 TO 512 BYTES RAM, ADC, WDG, SCI, SPI AND 2 TIMERS
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
ST62T85B/ST62E85B/ST6285B - 8-BIT OTP/EPROM/ROM MCU WITH LCD DRIVER, EEPROM AND A/D CONVERTER
8/16-bit MCU family with up to 64K ROM/OTP/EPROM and up to 2K RAM
Folder actuator
ST6215C/ST6225C - 8-BIT MCUS WITH A/D CONVERTER, TWO TIMERS, OSCILLATOR SAFEGUARD & SAFE RESET
ST72101/ST72212/ST72213 - 8-BIT MCU WITH 4 TO 8K ROM/OTP/EPROM, 256 BYTES RAM, ADC, WDG, SPI AND 1 OR 2 TIMERS 七倍外设驱
5V VERY LOW DROP VOLTAGE REGULATORS 七倍外设驱
|
RECOM Electronic GmbH
Linear Technology, Corp.
|
| M38184AM-256FP M38184AM-258FP M38184AM-273FP M3818 |
Single-chip 8-bit CMOS microcomputer, 36864 PROM, 256 RAM
Single-chip 8-bit CMOS microcomputer, 36864 PROM, 512 RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ST63P56 ST6356 ST6357 ST6327 ST6326 ST63PXX ST6306 |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.8A; On-Resistance, Rds(on):0.062ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-1206; Leaded Process Compatible:No 8位微控制器HCMOS背驮式电视应
(ST63Pxx) 8 Bit HCMOS Piggyback MCUs for TV Applications
8-BIT HCMOS PIGGYBACK MCUs FOR TV APPLICATIONS
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| CY7C0251AV CY7C036AV CY7C024AV-20AXC CY7C026AV-25A |
3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM 4, 8 or 16K × 16 organization
|
Cypress Semiconductor
http://
|
| IDT709269S12PF IDT709269S12PFI IDT709269S9PFI IDT7 |
From old datasheet system
HIGH-SPEED 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
16K x 16 Sync, Dual-Port RAM, PipeLined/Flow-Through
|
IDT[Integrated Device Technology]
|
| PSD854212JIT PSD854212JT PSD854212MIT PSD854212MT |
Flash In-System Programmable ISP Peripherals For 8-bit MCUs
FLASH IN-SYSTEM PROGRAMMABLE (ISP) PERIPHERALS FOR 8-BIT MCUS
Flash PSD, 3.3V Supply, for 8-bit MCUs 2 Mbit 256 Kbit Dual Flash Memories and 64 Kbit SRAM
|
STMicroelectronics
ST Microelectronics
|
| IDT70V26L55GI IDT70V26L55J IDT70V26L55J8 IDT70V26L |
HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM
16K x 16 3.3V Dual-Port RAM
|
IDT
|
| CY7C057V-20BBC CY7C057V-20AC CY7C057V-15AI CY7C056 |
3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM 16K X 36 DUAL-PORT SRAM, 20 ns, PBGA172
3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM 3.3 16K/32K × 36 FLEx36异步双端口静态存储器
|
http://
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
