| PART |
Description |
Maker |
| VMO550-01F |
HiPerFET MOSFET Module 590 A, 100 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET
MOSFET Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXFN44N50U2 IXFN44N50U3 IXFN48N50U2 IXFN48N50U3 IX |
HiPerFET Power MOSFET （Buck & Boost Configurations for PFC & Motor Control Circuits最大漏源击穿电00V,导通电.10Ω的N沟道增强型HiPerFET功率MOSFET（步步降配置，用于PFC和电机控制电路）)
HiPerFET Power MOSFETs
MOSFET Modules
|
IXYS Corporation
|
| FMM200-004PL |
MOSFET Modules
Trench Power MOSFET
|
IXYS[IXYS Corporation]
|
| VMM15-045 |
Dual Power MOSFET Modules
|
IXYS[IXYS Corporation]
|
| VWM350-0075P |
MOSFET Modules
Three phase full bridge with Trench MOSFETs 340 A, 75 V, 0.0033 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| PKG2611PI PKG2625PI PKG2000 PKG2410PI PKG2623PI |
4660 W DC/DC Power Modules 24 V Input Series
KPSE 10C 10#20 PIN PLUG
46?60 W DC/DC Power Modules 24 V Input Series
46-60 W DC/DC Power Modules 24 V Input Series
|
ERICSSON[Ericsson]
|
| MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172- |
High Power Diode Modules 大功率二极管模块
High Power Diode Modules 190 A, 1600 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 800 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 1800 V, SILICON, RECTIFIER DIODE
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS Corporation
|
| VBO130-12NO7 VBO130-08NO7 VBO130-16NO7 VBO130-14NO |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| VUB50-16PO1 |
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS
|
| PM10CNJ060 |
IPMS Modules: 600V
INTELLIGENT POWER MODULES
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
