| PART |
Description |
Maker |
| LH53517 |
CMOS 512K (64K x 8) MROM
|
Sharp Corporation
Sharp Electrionic Components
|
| MX27C512 MX27C512PC-12 MX27C512PC-15 MX27C512PC-45 |
Single Output LDO, 50mA, Fixed(3.2V), Low Quiescent Current, Thermal Protection 5-SOT-23 12k位[64Kx8]的CMOS存储
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDSO28
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PQCC32
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 45 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 120 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 12-SOP 64K X 8 OTPROM, 55 ns, PDIP28
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| LH534A00 LH534A00T |
CMOS 4M(512K X 8) Mask-Programmable ROM
CMOS 4M (512K x 8) MROM
Lens Cap; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
|
Sharp Electrionic Components
Sharp Corporation
|
| X28C512 |
512K bit CMOS EEPROM (64K X 8)
|
Xicor
|
| LH5P860 LH5P860D-80 LH5P860N-80 |
CMOS 512K (64K x 8) Pseudo-Static RAM
|
Sharp Electrionic Components
|
| AT27BV512-15TI AT27BV512-15JI AT27BV512-90RC AT27B |
512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel
|
| MX26C512A 26C512A MX26C512AQC-70 MX26C512ATC-90 MX |
512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM 12k位[64K的8]的CMOS多重一次性可编程存储
From old datasheet system
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
Macronix 旺宏
ETC[ETC]
Macronix International
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| CAT28F512P-12T CAT28F512N-15T CAT28F512NA-12T CAT2 |
64K X 8 FLASH 12V PROM, 90 ns, PDSO32
512K-Bit CMOS Flash Memory
Bulk Erase Flash Memory, 512Kb
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
http://
CATALYST[Catalyst Semiconductor]
|
| SAB80C517-16-N-T40/85 SAB80C537-M16 SAB80C517-M-T4 |
8-BIT, MROM, 12 MHz, MICROCONTROLLER, PQFP100
High Speed CMOS Logic 4-Bit Binary Full Adder with Fast Carry 16-SOIC -55 to 125
High Speed CMOS Logic 8-Bit Universal Shift Register with 3-State Outputs 20-SOIC -55 to 125 高速CMOS逻辑83态输出通用变换缓存SOIC-20封装 工作温度55℃_125
8-Bit CMOS Single-Chip Microcontroller 8-BIT, MROM, 16 MHz, MICROCONTROLLER, PQCC84
High Speed CMOS Logic 8-Input NAND Gate 14-PDIP -55 to 125 8位CMOS单芯片微控制
8-BIT, MROM, 12 MHz, MICROCONTROLLER, PQCC84
|
Siemens Semiconductor Group
SIEMENS AG
INFINEON TECHNOLOGIES AG
SIEMENS A G
http://
|
| MB811171622A-125 |
CMOS 2×512K×16 Bit
Synchronous Dynamic RAM(CMOS 2×512K×16 位同步动态RAM)
|
Fujitsu Limited
|
