| PART |
Description |
Maker |
| BS223 |
DMOS Transistors (P-Channel)
DMOS Transistors (P-Channel)(P通道DMOS晶体
|
GE[General Semiconductor]
GE Security, Inc.
|
| BS108 |
DMOS Transistors (N-Channel)
|
General Semiconductor
|
| BS209 |
DMOS Transistors (P-Channel)(P通道DMOS晶体
|
GE Security, Inc.
General Semiconductor
|
| BS109 |
DMOS Transistors (N-Channel)(N通道DMOS晶体 DMOS晶体管（N沟道）（不适用通道的DMOS晶体管）
|
GE Security, Inc.
GE[General Semiconductor]
|
| STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| STN4822 |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| 2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z |
N-channel enhancement type DMOS
MOS Field Effect Transistors
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| ZVN0120L ZVN0120 ZVN0120A ZVN0120B |
BV(dss): 200V; I(d): 0.16A; R(ds): 16 Ohm; N-channel enhancement-mode vertical DMOS FET
N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
ZETEX[Zetex Semiconductors]
|
| UCN5818AF UCN5818EPF UCN5818F 5818-F |
BiMOS II 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS BiMOS II 32位串行输入，锁存消息来源现役F1车手- DMOS的上下拉伸机
Bimos ii 32-Bit Serial-input, Latched Source Driver With Active-dmos Pull-down
BiMOS II 32-BIT SERIAL-INPUT / LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| VN0300L VN0300 VN0300B VN0300D |
N-Channel Enhancement-Mode Vertical DMOS FETs
N-Channel Enhancement-Mode Vertical DMOS Power FETs
|
Supertex Inc
|
| SI3909DV |
P-Channel Vertical DMOS
|
TY Semiconductor Co., Ltd
|
