| PART |
Description |
Maker |
| APT10M09LVFR APT10M09B2VFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 100V 100A 0.009 Ohm
|
Advanced Power Technology, Ltd.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| NSP0100 NSP0203 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 100A I(C) | TO-258
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 100A I(C) | TO-258 晶体管|晶体管|进步党| 100V的五（巴西）总裁| 100A一（c）|58
|
Central Semiconductor, Corp.
|
| APT10M25SVR |
POWER MOS V 100V 75A 0.025 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
ADPOW[Advanced Power Technology]
|
| APT10M19BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 100V 75A 0.019 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT10M25BVR APT10M25 |
POWER MOS V 100V 75A 0.025 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| HUF76132S3S HUF76132P3 FN4553 76132P |
75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N沟道,逻辑电平,UltraFET功率MOS场效应管)
Dual, Precision JFET High Speed Operational Amplifier; Package: SOIC; No of Pins: 8; Temperature Range: Industrial
75A 30V 0.011 Ohm N-Channel Logic Level UltraFET Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| APT20M20B2LL APT20M20LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 200V 100A 0.020 Ohm
|
Advanced Power Technology Ltd.
|
| RJK1028DSP-00-J5 |
100V, 3A, 165m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK1052DPB-13 RJK1052DPB-00-J5 RJK1052DPB-15 |
100V, 20A, 20m max. Silicon N Channel Power MOS FET Power Switching
100V, 20A, 20m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| STB30N10 6216 |
From old datasheet system
N - CHANNEL 100V - 0.06ohm - 30A - D2PAK POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
