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SPB160N04S2-03 - Low Voltage MOSFETs - TO263; 160A; 40V; NL;2.9mohm OptiMOS Power-Transistor

SPB160N04S2-03_245877.PDF Datasheet


 Full text search : Low Voltage MOSFETs - TO263; 160A; 40V; NL;2.9mohm OptiMOS Power-Transistor


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SPB160N04S2L-03 Low Voltage MOSFETs - TO263;160A;LL
OptiMOS Power-Transistor
INFINEON[Infineon Technologies AG]
MIC39300 MIC39300-1.8BT MIC39300-1.8BU MIC39300-1. 3A, Low-Voltage Low-Dropout Regulator
IC REG LDO 3A 1.8V TO263 1.8 V FIXED POSITIVE LDO REGULATOR, 0.55 V DROPOUT, PSSO3
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Linear Voltage Regulator IC; Output Current Max:3A; Package/Case:5-TO-263; Output Voltage:1.8V; Current Rating:3A; Leaded Process Compatible:No; Output Voltage Max:1.8V; Peak Reflow Compatible (260 C):No
Micrel Semiconductor, Inc.
MICREL INC
APT1001RBLC APT1001RSLC APT1001 POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
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Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
ADPOW[Advanced Power Technology]
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SPB100N03S2-03 SPP100N03S2-03 SPI100N03S2-03 OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.3mOhm, 100A, NL
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INFINEON[Infineon Technologies AG]
APT5014BLL APT5014SLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
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APT6017B2FLL APT6017LFLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代
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