| PART |
Description |
Maker |
| RN2108FT RN2109FT |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN2707JE |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN2710JE |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN2111FT |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN1910FE RN1911FE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN4988FE |
Transistor Silicon NPN PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| RN47A3 |
Transistor Silicon NPN PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA[Toshiba Semiconductor]
|
| RN47A1 |
Transistor Silicon NPN PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
|
TOSHIBA
|
| KRC659E KRC657E KRC658E |
Built in Bias Resistor
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KRX103U KRX103 KRX103E |
Built in Bias Resistor
EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| R3131N26EA5-TR R3131NXXXA R3130NXXXA R3130N36EA-TR |
Low Voltage Detector with built-in Delay Circuit
Low Voltage Detector with built in Delay Circuit
Low voltage detector with built-in delay circuit. Detector threshold 3.6V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 400ms. Output type Nch open drain. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 100ms. Output type CMOS. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 50ms. Output type CMOS. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Standard output delay time 240ms. Output type CMOS. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 50ms. Output type Nch open drain. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 100ms. Output type Nch open drain. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Output delay time 200ms. Output type Nch open drain. Taping type TR.
Low voltage detector with built-in delay circuit. Detector threshold 3.08V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR.
|
Ricoh
|
