| PART |
Description |
Maker |
| MLP2N06CL MLP2N06CLG |
SMARTDISCRETES MOSFET 2 Amps, 62 Volts, Logic Level(2A, 62V, 逻辑电平SMARTDISCRETES MOSFET)
SMARTDISCRETES TM MOSFET 2 Amps, 62 Volts, Logic Level N−Channel TO−220
|
ONSEMI[ON Semiconductor]
|
| MLD2N06CLT4 MLD2N06CLT4G MLD2N06CL MLD2N06CLG |
SMARTDISCRETES TM MOSFET 2 Amp, 62 Volts, Logic Level N−Channel DPAK
SMARTDISCRETES MOSFET 2 Amp, 62 Volts, Logic Level N Channel DPAK(智能MOSFET)
|
http://
ONSEMI[ON Semiconductor]
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| Q4004LT Q6015LT Q6015LTH Q2010LT Q4015LT Q4015LTH |
Internally Triggered Triacs (4 A to 15 A)
Power Driver IC; Driver Type:Sink; Source Output Current Max:600mA; Package/Case:22-DIP; Leaded Process Compatible:Yes; No. of Drivers:8; Output Current Max:600mA; Output Voltage Max:50V; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A5甲）
Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A15甲）
|
TECCOR[Teccor Electronics]
Littelfuse, Inc.
TE Connectivity, Ltd.
|
| AGB3309 AGB3309S24Q1 AGB3309_REV_1.0 |
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block
50з High Linearity Low Noise Internally Biased Wideband Gain Block
From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
| MGFC26V5964A MGFC36V5964A MGFC36V59964A |
5.9-6.4 GHz BAND 4W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
5.9-6.4GHz band 4W internally matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V5258 C365258 |
5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK37V4045 K374045 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET
From old datasheet system
14.0~14.5GHZ BAND 5W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK39V4045 K394045 |
14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
From old datasheet system
14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V5964A C365964A |
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V4450A C424450A |
From old datasheet system
4.4~5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
