PART |
Description |
Maker |
HFA08TB60S HFA08TB60STRR |
HEXFREDTM Ultrafast, Soft Recovery Diode 600V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
|
IRF[International Rectifier]
|
HFA140NH60 |
600V 140A HEXFRED Discrete Diode in a D-67 Half-Pak package 600V的律40A HEXFRED二极分立二极管在D - 67半白
|
Hitachi,Ltd.
|
HFA08TB120S |
1200V 8A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package 12008A条HEXFRED二极分立二极管一名D2级,白(HEXFRED二极)封
|
Alliance Semiconductor, Corp.
|
HFA04SD60S |
Ultrafast, Soft Recovery Diode 超快,软恢复二极 600V 4A HEXFRED Discrete Diode in a D-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
HFA08SD60S HFA08SD60 |
Ultrafast, Soft Recovery Diode 超快,软恢复二极 600V 8A HEXFRED Discrete Diode in a D-Pak package From old datasheet system
|
International Rectifier, Corp. IRF[International Rectifier]
|
HGTG30N60B3D HGT4E30N60B3DS |
60A/ 600V/ UFS Series N-Channel IGBT 60A 600V UFS Series N-Channel IGBT 60A, 600V, UFS Series N-Channel IGBT 2.5V 36-mc CPLD - NOT RECOMMENDED for NEW DESIGN CONNECTOR ACCESSORY 60 A, 600 V, N-CHANNEL IGBT, TO-268AA
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
HFA16TB120 |
1200V 16A HEXFRED Discrete Diode in a TO-220AC package
|
International Rectifier
|
HFA08TB60 |
600V 8A HEXFRED Discrete Diode in a TO-220AC package Ultrafast, Soft Recovery Diode Ultrafast/ Soft Recovery Diode
|
IRF[International Rectifier]
|
MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module (DISCRETE/OPTO)
|
Toshiba Semiconductor
|
30ETH06 30ETH06-1 30ETH06S |
Hyperfast Rectifier 600V 30A HyperFast Discrete Diode in a TO-220AC package 600V 30A HyperFast Discrete Diode in a TO-262 package 600V 30A HyperFast Discrete Diode in a D2-Pak (UltraFast) package
|
IRF[International Rectifier]
|
HFA70NC60CSM |
600V 70A HEXFRED Common Cathode Diode in a D61-8-SM package
|
International Rectifier
|
IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|