PART |
Description |
Maker |
CSB1116 CSB1116A CSB1116G CSB1116L CSB1116Y |
0.750W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 1.000A Ic, 135 - 600 hFE 0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 400 hFE 0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 200 - 400 hFE 0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 300 - 600 hFE 0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 270 hFE
|
Continental Device India Limited
|
BD178-10 |
30.000W Switching PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 63 - 160 hFE.
|
Continental Device India Limited
|
CMBT2484 |
0.225W General Purpose NPN SMD Transistor. 60V Vceo, 0.050A Ic, 250 hFE.
|
Continental Device India Limited
|
BCX52 BCX51 BCX53 BCX53-16 BCX53-10 BCX51-10 BCX51 |
General Purpose Transistors - SOT89; VCEO=60V; hFE=100...250 General Purpose Transistors - SOT89; VCEO=45V; hFE=100...250 General Purpose Transistors - SOT89; VCEO=45V; hFE=40...250 General Purpose Transistors - SOT89; VCEO=80V; hFE=63...160 General Purpose Transistors - SOT89; VCEO=60V; hFE=63...160 General Purpose Transistors - SOT89; VCEO=45V; hFE=63...160 PNP SILICON AF TRANSISTORS
|
INFINEON[Infineon Technologies AG]
|
CFC2026Y |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CFA1046Y
|
Continental Device India Limited
|
CMMT491 |
0.500W General Purpose NPN SMD Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. Complementary CMMT591
|
Continental Device India Limited
|
2SC3746 2SA1469 2SA1469S 2SA1469Q 2SC3746R |
60V/5A High-Speed Switching Applications TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220VAR TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | SOT-186 晶体管|晶体管|叩| 60V的五(巴西)总裁| 5A条一(c)|的SOT - 186
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
2SB1561 |
Medium Power Transistor (-60V -2A 60V 2A)
|
ROHM[Rohm]
|
IRFIZ48G IRFIZ48 IRFIZ48GPBF |
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A) Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) 功率MOSFET(减振钢板基本\u003d 60V的,的Rdson)\u003d 0.018ohm,身份证\u003d 37A条) Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A) 60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp. IRF[International Rectifier]
|
BSP75G BSP75G2 |
Ultra Low Capacitance Transient Voltage Suppressor Diodes 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET?/a> MOSFET 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET⑩ MOSFET 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET??MOSFET IntelliFET 60V self protected MOSFET
|
List of Unclassifed Manufacturers ETC N.A. Zetex Semiconductors
|
IRFI064 IRFI064-15 |
Simple Drive Requirements TRANSISTOR N-CHANNEL(Vdss=60V/ Rds(on)=0.017ohm/ Id=45A*) TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*) 60V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
|
International Rectifier
|