| PART |
Description |
Maker |
| K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY5V22GF HY5V22GF-H HY5V22GF-P |
4 Banks x 1M x 32Bit Synchronous DRAM
|
Hynix Semiconductor
|
| KM4132G271AQ-10 KM4132G271A KM4132G271A-8 KM4132G2 |
128K x 32Bit x 2 Banks Synchronous Graphic RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM4132G512A |
256K X 32Bit X 2 Banks Synchronous Graphic RAM
|
Samsung semiconductor
|
| KM4132G271BTQ-8 KM4132G271BTQ_R-8 KM4132G271B KM41 |
128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY5V62CF-S HY5V62CF-7 HY5V62CF |
SDRAM - 64Mb
4 BANKS X 512K X 32BIT SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
| K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM4132G512 |
256K x 32Bit x 2 Banks Synchronous Graphic RAM(256K x 32x 2组同步图RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4D26323AA-GL |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
