| PART |
Description |
Maker |
| CY7C1356BV25-225 CY7C1354BV25-166 CY7C1354BV25-225 |
256K X 36 ZBT SRAM, 3.2 ns, PBGA119
256K x 36/512K x 18 Pipelined SRAM with NoBLArchitecture 256 × 36/512K × 18流水线的SRAM架构的总线延迟
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor Corp.
Crystek, Corp.
|
| GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I |
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology, Inc.
Molex, Inc.
|
| MBM29LV400B-10 MBM29LV400B-12 MBM29LV400T-10 MBM29 |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器)
|
Fujitsu Limited
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS880E32AT-250 |
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| CY14B104L-BV45XIT CY14B104N-BV45XCT CY14B104N-BV45 |
4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44
4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO54
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| A67L9318E-4.2F A67L8336E A67L8336E-2.6 A67L8336E-2 |
512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 512k × 1856 × 36 LVTTL，流水线ZeBL的SRAM
512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 12k × 1856 × 36 LVTTL，流水线ZeBL的SRAM
DIODE ZENER SINGLE 500mW 5.1Vz 20mA-Izt 0.05 5uA-Ir 2Vr DO35-GLASS 5K/REEL
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| CYD09S18V-100BBC CYD09S18V-100BBI CYD02S18V-133BBC |
512K X 18 DUAL-PORT SRAM, 4.7 ns, PBGA256 17 X 17 MM, 1 MM PITCH, LEAD FREE, FBGA-256
FLEx18 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM
FLEx18垄芒 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM
|
Cypress Semiconductor, Corp.
|
| GS88136AD-150 |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS880E18BGT-200IV GS880E18BT-150IV GS880E18BT-250I |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
