| PART |
Description |
Maker |
| BR24L16 BR24L16FJ-W BR24L16FVM-W BR24L16F-W BR24L1 |
2k8 bit electrically erasable PROM
2k】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| BR24L01AF-W BR24L01AFV-W BR24L01AFVM-W BR24L01 BR2 |
1288 bit electrically erasable PROM
128】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| BR24L32 BR24L32FV-W BR24L32FJ-W BR24L32F-W BR24L32 |
4k8 bit electrically erasable PROM
4k】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| 24LC32AX 24AA32A 24LC32AT-I_SM 24LC32AT-I_SMG 24LC |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I<SUP>2</SUP>C™ compatible 2-wire serial ...
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r
32K I2C Serial EEPROM
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial ...
32KIC Serial EEPROM
32K 1.8V I2C Serial EEPROM
|
MICROCHIP[Microchip Technology]
|
| W27L010 W27L010-12 W27L010-90 W27L010P-12 W27L010P |
128K 8 ELECTRICALLY ERASABLE EPROM 128K X 8 EEPROM 12V, 90 ns, PDSO32
128K ′ 8 ELECTRICALLY ERASABLE EPROM
128K 8 ELECTRICALLY ERASABLE EPROM
128K ? 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| BR34L02FV-W |
256 bit Electrically Erasable PROM
256? bit Electrically Erasable PROM
|
Rohm CO.,LTD.
|
| BR24L08-W07 BR24L08F-W BR24L08FJ-W BR24L08FV-W BR2 |
1024】8 bit electrically erasable PROM
|
Rohm
|
| IS25C16-2CLI IS25C16-2GLI |
8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
INTEGRATED SILICON SOLUTION INC
|
| M6M80021 M6M80021FP M6M80021P |
2048 BIT ELECTRICALLY ERASABLE AND RPOGRAMMABLE ROM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| XLS93C66 |
4096-Bit Serial Electrically Erasable PROM
|
Exel Microelectronics
|
