| PART |
Description |
Maker |
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| 2SK2349 1034 |
N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications
From old datasheet system
High-Voltage/ High-Speed Switching Applications
|
Sanyo Semicon Device
|
| 2SC2552 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING HIGH SPEED DC-DC CONVERTER APPLICATIONS.
|
TOSHIBA
|
| 2SK2037 E001426 SK2037 |
N CHANNEL TYPE (HIGH SPEED/ ANALOG SWITCHING APPLICATIONS)
HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS
TOSHIBA FIELD EFFECT TRANSISTOR SILICON CHANNEL TYPE
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| HSU226 |
Diodes>Switching
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
| H5N2801P |
Silicon N Channel MOS FET High Speed Power Switching
Transistors>Switching/MOSFETs
|
Renesas Electronics Corporation
|
| H7N0608AB |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| BAS16-02W BAS1602W Q62702-A1239 |
From old datasheet system
Silicon Switching Diode Preliminary data (For high-speed switching applications)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| H5N2515P-E H5N2515P |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
