| PART |
Description |
Maker |
| HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4米1位动态随机存储器的低功米1位动态随机存储器
4M X 1 FAST PAGE DRAM, 70 ns, PDSO20 0.300 INCH, PLASTIC, SOJ-26/20
4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1动RAM(快速页面模)
|
http://
Infineon Technologies AG
SIEMENS AG
|
| IRFU9120PBF SIHFR9120 IRFR9120 IRFR9120PBF IRFR912 |
Dynamic dV/dt Rating
|
Kersemi Electronic Co., Ltd.
Kersemi Electronic Co.,...
|
| IRFP240 IRFP240PBF |
Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Kersemi Electronic Co., Ltd.
|
| IRFR110TR IRFR110TRL IRFR110TRPBF IRFR110PBF IRFR1 |
Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Kersemi Electronic Co., Ltd.
|
| IRFBE30 |
Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Kersemi Electronic Co., Ltd.
|
| IRF540 IRF540PBF |
Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Kersemi Electronic Co., Ltd.
|
| GSMBD2004 |
S U R FA C E MO U N T, SWI T C H I NG D I O D E V O LTAG E 3 0 0 V, C U R R E N T 0 . 2 2 5 A
|
E-Tech Electronics LTD
|
| STD4NA40 STD4NA40-T4 STD4NA40-1 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Leaded Cartridge Fuse; Current Rating:500mA; Voltage Rating:250V; Fuse Terminals:Axial Lead; Fuse Type:Time Delay; Voltage Rating:250V; Body Material:Glass; Diameter:4.7mm; Fuse Size/Group:5 x 15 mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-251
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| FWH-500A COOPERINDUSTRIES-FWH-225A |
Semiconductor Fuse; Current Rating:500A; Voltage Rating:500V; Fuse Size/Group:1.5 x 2.09 "; Fuse Type:Fast Acting; Fuse Terminals:Blade; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Series:FWH RoHS Compliant: No
|
COOPER INDUSTRIES
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
