| PART |
Description |
Maker |
| M5M512R M5M512R88DJ-10 M5M512R88DJ-12 M5M512R88DJ- |
1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
|
| HN28F101 HN28F101CP-12 HN28F101CP-15 HN28F101CP-20 |
131072-word ?? 8-bit CMOS Flash Memory
|
ETC
|
| M5M51008DFP M5M51008DRV-55H M5M51008DRV-70H M5M510 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| M5M51008CKR-70 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Sem...
|
| M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HM628128LP |
131072-word x 8-bit High Speed CMOS Static RAM
|
Hitachi,Ltd.
|
| HM658128A |
131072-word x 8-bit High Speed CMOS Pseudo Static RAM
|
Hitachi
|
| HN27C101G HN27C101AG-17 |
IC EPROM UV 1MBIT 128K x 8 170NS 32CDIP
131072 word x 8 Bit CMOS UV EPROM
|
Renesas Technology / Hitachi Semiconductor
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| TC55V1001F TC55V1001F-10 TC55V1001F-85 TC55V1001FT |
131,072 WORD BY 8 BIT STATIC RAM 131072 Word8位静态RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
