PART |
Description |
Maker |
2N700007 2N7000RLRPG 2N7000 2N7000G 2N7000RLRA 2N7 |
Small Signal MOSFET 200 mAmps, 60 Volts N?Channel TO?92 200 mAMPS 60 VOLTS Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 200 mAMPS 60 VOLTS
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ONSEMI[ON Semiconductor]
|
LBSS138LT1G LBSS138LT1 |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
LRC[Leshan Radio Company]
|
VN2406L-D |
Small Signal MOSFET 200 mAmps, 240 Volts N-Channel TO-92
|
ON Semiconductor
|
NTES1P02 NTES1P02-D |
P?Channel Power MOSFET Power MOSFET 50 mAmps, 20 Volts P-Channel(50mA,20V,P沟道增强型MOS场效应管) Power MOSFET 50 mAmps, 20 Volts P-Channel SC-75
|
ON Semiconductor
|
VN0300L/D VN0300L-D |
Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 Small Signal MOSFET 200 mAmps60 Volts
|
ON Semiconductor
|
BS108ZL1 BS108 BS108ZL1G BS108G |
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92(250mA,200V,小信号,逻辑电平,N-沟道增强型MOS场效应管(TO-92封装
|
ONSEMI[ON Semiconductor]
|
BVSS123LT1G |
Power MOSFET 170 mAmps, 100 Volts
|
ON Semiconductor
|
NTES1N02 |
Power MOSFET 50 mAmps, 20 Volts N-Channel(50mA,20V,N沟道增强型MOS场效应管)
|
ON Semiconductor
|
MGSF1P02LT1 MGSF1P02LT3 MGSF1P02L MGSF1P02LT3G |
Power MOSFET 750 mAmps, 20 Volts P-Channel(750mA20V,P沟道增强型功率MOS场效应管)
|
ONSEMI[ON Semiconductor]
|
MMBF2202PT1-D |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
|
ON Semiconductor
|
APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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Microsemi, Corp. ADPOW[Advanced Power Technology]
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