| PART |
Description |
Maker |
| TE28F640J3 TE28F256J3 TE28F320J3C-110 TE28F128J3A- |
8M X 16 FLASH 2.7V PROM, 120 ns, PDSO56
Intel StrataFlash Memory (J3)
Strata Flash Memory 256M
256M Strata Flash Memory
|
NUMONYX
Intel Corporation
|
| MB84VA2103-10 MB84VA2102 MB84VA2102-10 MB84VA2103 |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 16M (x16) FLASH MEMORY & 2M (x 8) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM（宽30
|
Intel, Corp.
Intel Corp.
|
| MB84VA2000-10 MB84VA2001-10 MB84VA2000 |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 8M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| EN29LV641H EN29LV641L EN29LV641L-70TCP EN29LV641L- |
64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
|
Eon Silicon Solution Inc.
|
| LH28F160S5 LH28F160S5-L10 LH28F160S5-L70 LH28F160S |
LH28F160S5D-L70 16MBIT (2MB x 8/1MB x 16)Smart 5 Flash Memory
16-MBIT(2MBx8/MBx16)Smart 5 Flash MEMORY
16-MBIT (2MBx8/1MBx16) Smart 5 Flash MEMORY
|
SHARP[Sharp Electrionic Components]
|
| CAT28F020HI-12T CAT28F020 CAT28F020HI-90T CAT28F02 |
2 Megabit CMOS Flash Memory
2 Mb CMOS Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
ON Semiconductor
|
| M5M29KE131BVP |
Memory>NOR type Flash Memory
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)
|
Renesas Electronics Corporation
|
| UT6716470-WCA UT6716470-WCC UT6716455-WCC UT671645 |
8K X 8 STANDARD SRAM, 55 ns, CDFP28
8K X 8 STANDARD SRAM, 55 ns, CDIP28
32 Mb (2M x 16, 4M x 8) MirrorBit, Flash Memory 静态存储器| 8KX8 |的CMOS | RAD数据通信硬|计划生育| 28脚|陶瓷
4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory
64 Mb (4M x 16) Boot Sector, Flash Memory
SRAM|8KX8|CMOS| RAD HARD|FP|28PIN|CERAMIC
|
Maxim Integrated Products, Inc.
|
| HY29F080 HY29F080G12 HY29F080G70 HY29F080G90 HY29F |
8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory
8 Megabit (1M x 8), 5 Volt-only, Flash Memory
IC,EEPROM,NOR FLASH,1MX8,CMOS,TSOP,40PIN,PLASTIC
From old datasheet system
|
HYNIX[Hynix Semiconductor]
|
| CAT28F512P-12T CAT28F512N-15T CAT28F512NA-12T CAT2 |
64K X 8 FLASH 12V PROM, 90 ns, PDSO32
512K-Bit CMOS Flash Memory
Bulk Erase Flash Memory, 512Kb
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
http://
CATALYST[Catalyst Semiconductor]
|
