| PART |
Description |
Maker |
| BR24L08FVM-W BR24L08FJ-W BR24L08FV-W BR24L08F-W BR |
10248 bit electrically erasable PROM
1024】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| ATF16V8B ATF16V8BQ ATF16V8BQL |
250 gate electrically erasable PLD, 20 pins, standard power, 5V
250 gate electrically erasable PLD, 20 pins, quarter power, 5V
250 gate electrically erasable PLD, 20 pins, quarter and low power, 5V
|
Atmel
|
| BR24L08-W BR24L08F-W BR24L08FJ-W BR24L08FV-W BR24L |
1024×8 bit electrically erasable PROM
1024 bit electrically erasable PROM 1024位电可擦除可编程ROM
|
Rohm Co., Ltd.
Rohm CO.,LTD.
|
| TC57512AD-15 TC57512AD-20 |
65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
|
ETC
List of Unclassifed Manufacturers
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| W27C010 |
128K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond
|
| PALCE16V8H-15E5/B2A PALCE16V8H-15E5/BRA PALCE16V8H |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Lattice Semiconductor, Corp.
|
| GAL22LV10C-7LJ GAL22LV10D-5LJ |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Lattice Semiconductor, Corp.
|
| GAL16V8D-7LR/883 GAL16V8D-7LD/883 GAL16V8D-15LR/88 |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Lattice Semiconductor, Corp.
|
| W27E020 W27E020-12 W27E020-70 W27E020-90 W27E020P- |
256K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics Corp
WINBOND[Winbond]
|
