| PART |
Description |
Maker |
| PF0027 |
MOS FET Power Amplifier Module
MOSFET Power Ampllfier Module for E-TACS Handy Phone
|
Renesas Technology
Hitachi Semiconductor
|
| M68732L 68732L |
SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO 硅场效应晶体管功率放大器00 - 430MHz瓦，调频便携式收音机
From old datasheet system
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| PF1010A |
MOS FET Power Amplifier Module for P/C LAN
|
HITACHI[Hitachi Semiconductor]
|
| PF0310A |
MOS FET Power Amplifier Module for VHF Band
|
HITACHI[Hitachi Semiconductor]
|
| M68741 68741 |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO 硅场效应晶体管功率放大器89 - 915MHz.8W，便携式收音机调
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M68745H 68745H |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER 896-941MHz 3.8W FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER / 896-941MHz / 3.8W / FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M68745L 68745L |
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 806-870MHz / 3.8W / FM PORTABLE RADIO
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PF0414B PF0414 |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| M68732SH 68732SH |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PF08103B |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| M68710EL |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 290-330MHz, 2W, FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER 290-330MHz 2W FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
