PART |
Description |
Maker |
CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100 CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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GS881Z18BD-133 GS881Z18BD-133I GS881Z18BD-150 GS88 |
133MHz 8.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 150MHz 7.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 166MHz 7ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 200MHz 6.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 225MHz 6ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 250MHz 5.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
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GSI Technology
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GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MBS /双氰胺同步突发静态存储器 DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35 (GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
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ETC Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers List of Unclassifed Man...
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CY7C1386DV25-250BZXI CY7C1386DV25-250BZI CY7C1386D |
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 18兆位(为512k × 36/1M × 18)流水线双氰胺同步静态存储器 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3.4 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA119
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))
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http:// GSI Technology, Inc.
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GS8161E32D-166 GS8161E32D-166I GS8161E3T-200 GS816 |
14-Bit Registered Buffer With SSTL_2 Inputs and Outputs 48-TVSOP 0 to 70 100万1812k × 32的,12k × 36 35.7同步突发静态存储器 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M×18512k×32512k×36 18M位同步突发静态存储器 20-Bit SSTL_3 Interface Buffer With 3-State Outputs 64-TSSOP 0 to 70 100万1812k × 32的,12k × 36 35.7同步突发静态存储器 25-Bit Configurable Registered Buffer With Address-Parity Test 96-LFBGA 0 to 70 100万1812k × 32的,12k × 36 35.7同步突发静态存储器 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M×1812k×3212k×36 18M位同步突发静态存储器 Quad 2-input Exclusive-OR gates 14-PDIP 0 to 70 100万1812k × 32的,12k × 36 35.7同步突发静态存储器 25-Bit Configurable Registered Buffer with SSTL_18 Inputs and Outputs 96-LFBGA 0 to 70 100万1812k × 32的,12k × 36 35.7同步突发静态存储器 20-Bit SSTL_3 Interface Universal Bus Driver With 3-State Outputs 64-TSSOP 0 to 70 Quad 2-input Exclusive-OR gates 14-SOIC 0 to 70 13-Bit to 26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 56-VQFN 0 to 70
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http:// GSI Technology Electronic Theatre Controls, Inc.
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GS8161E36BD-200 GS8161E18BD-200 GS8161E32BD-250 GS |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
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http://
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GS816136BD-250 GS816132BD-250 GS816136BT-250 GS816 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
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http://
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GS8161E18BGD-250IV GS8161E18BT-250IV GS8161E18BT-2 |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
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GSI[GSI Technology]
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GS881E18T-11 GS881E18T-11I GS881E18T-11.5 |
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
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GSI Technology, Inc.
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GS8160V18AT-250 GS8160V18AT-250I GS8160V18AT-350I |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 5.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 4.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 6.5 ns, PQFP100
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GSI Technology, Inc.
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GS816132BD-150I GS816118BGD-150I GS816118BD-200 GS |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6.5 ns, PBGA165 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 5.5 ns, PBGA165 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 32 CACHE SRAM, 6.5 ns, PBGA165
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GSI Technology, Inc.
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