| PART |
Description |
Maker |
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M52S32321A-7.5BIG M52S32321A-10BIG M52S32321A-6BIG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M52L32321A-7.5BG M52L32321A-10BG M52L32321A-6BG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| W9812G2IH |
1M × 4 BANKS × 32BIT SDRAM
|
Winbond
|
| K4S643233E-SEN |
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
| K4S283234F-M |
1M x 32Bit x 4 Banks SDRAM in 90FBGA Data Sheet
|
Samsung Electronic
|
| K4S51323LF-F1H K4S51323LF-MC K4S51323L K4S51323LF- |
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
connector
From old datasheet system
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4M28323PH-F K4M28323PH-FC_F K4M28323PH-FE_G K4M28 |
4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
Elite Semiconductor Memory Technology, Inc.
Samsung semiconductor
|
| W981616BH |
SDRAM 1Mx16
512K ′ 2 BANKS ′ 16 BITS SDRAM
|
Winbond Electronics
|
| 50S116T |
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE[Ceramate Technical]
|
| HY57V643220CT HY57V643220CT-47 HY57V643220CT-5 HY5 |
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| K4S64323LH-HN75 K4S64323LH K4S64323LH-FC1H K4S6432 |
2M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
Dual Rail-To-Rail Micropower Operational Amplifier 8-PDIP 0 to 70 12k × 32Bit的4银行0FBGA移动SDRAM
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70 12k × 32Bit的4银行0FBGA移动SDRAM
Dual Rail-To-Rail Micropower Operational Amplifier 8-TSSOP 0 to 70 12k × 32Bit的4银行0FBGA移动SDRAM
512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 12k × 32Bit的4银行0FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
