| PART |
Description |
Maker |
| SB80-18 |
Schottky Barrier Diode (Twin Type Cathode Common) 180V, 8A Rectifier
180V/ 8A Rectifier
|
Sanyo Semicon Device
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
| 2SK2489 |
VZ Series Power MOSFET(180V 10A) VZ系列功率MOSFET80 10A条）
|
Shindengen Electric Manufacturing Co., Ltd.
|
| FRP1000 FRP1010 FRP1015 FRP1020 FRP2010CC FRP2020C |
Ultra-fast POWER planar?/a> Rectifiers 10-20 A, 50-200 V
Ultra-fast POWER planar Rectifiers 10-20 A, 50-200 V
Ultra-fast POWER planar⑩ Rectifiers 10-20 A, 50-200 V
Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 V
Ultra-fast POWER planarRectifiers 10-20 A, 50-200 V
CAP 120PF 50V 5% NPO(C0G) SMD-0603 TR-7-PA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| 2SK2132 2SK2132-T |
High-voltage power MOS FET 180V/4A
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| SBTC-2-20_20L SBTC-2-20 SBTC-2-20L SBTC-2-2020L |
Power Splitter/Combiners 2 Way-050з 200 to 2000 MHz 200 MHz - 2000 MHz RF/MICROWAVE COMBINER, 2.2 dB INSERTION LOSS
Power Splitter/Combiners 2 Way-0° 50 200 to 2000 MHz
Power Splitter/Combiners 2 Way-0∑ 50з 200 to 2000 MHz
Power Splitter/Combiners 2 Way-0 50 200 to 2000 MHz
|
MINI[Mini-Circuits]
|
| MURP20040CT_D MURP20040CT MURP20040 ON2758 MURP200 |
ULTRAFAST RECTIFIER 200 AMPERES 超快整流00安培
POWERTAP II SWITCHMODE Power Rectifier
From old datasheet system
ULTRAFAST RECTIFIERS 200 AMPERES 200.400 VOLTS
|
ON Semiconductor
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SB100-18 |
180V, 10A Rectifier(用于高频整流应用的重复反向电180V，平均整流电0A整流
Schottky Barrier Diode
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE.
|
Continental Device India Limited
|
