PART |
Description |
Maker |
2SC5765 |
MEDIUM POWER AMPLIFIER STROBO FLASH
|
UTC[Unisonic Technologies]
|
TFR1N TFR1T |
DIODE (STROBO FLASHER APPLICATIONS) (FAST RECOVERY)
|
Toshiba Corporation Toshiba Semiconductor
|
KTA1709 |
EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH/ HIGH CURRENT) EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT)
|
KEC Holdings KEC[KEC(Korea Electronics)]
|
KTA1242 KTA1242D KTA1242L |
EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH/ HIGH CURRENT) EPITAXIAL PLANAR PNP TRANSISTOR (STROBO FLASH, HIGH CURRENT)
|
Korea Electronics (KEC) KEC(Korea Electronics) KEC Holdings
|
TFR07 EE08489 |
STROBO FLASHER APPLICATIONS (FAST RECOVERY) From old datasheet system
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
KTA1001 |
EPITAXIAL PLANAR PNP TRANSISTOR (CAMERA STROBO FLASH, HIGH CURRENT) EPITAXIAL PLANAR PNP TRANSISTOR (CAMERA STROBO FLASH/ HIGH CURRENT)
|
KEC(Korea Electronics) KEC Holdings
|
TFR7H |
Fast Recovery Diode Silicon Diffused Type Strobo Flasher Applications (Fast Recovery)
|
TOSHIBA
|
2SC3670 E000875 |
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM OWER AMPLIFIER APPLICATIONS) RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 1K/BULK STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS From old datasheet system NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM OWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
2SD2470G-X-AB3-R 2SD2470G-X-T9S-B 2SD2470L-X-T9S-B |
STROBO AND DC/DC CONVERTERS
|
Unisonic Technologies
|
GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SA1327A 2SA1327A06 |
Strobe Flash Applications Audio Power Amplifier Applications
|
Toshiba Semiconductor
|