| PART |
Description |
Maker |
| BUT11 BUT11A |
Silicon Diffused Power Transistor(硅扩散功率型晶体
Silicon diffused power transistors
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| 6F80 12F 12F10 12F100 12F100B 12F10B 12F120 12F120 |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls
6,12 and 16 Amp Diffused Silicon Rectifier Diodes
|
IRF[International Rectifier]
|
| IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|
| MP4513 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT
From old datasheet system
SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
|
Fujitsu Component Limited.
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Toshiba Semiconductor
Fujitsu Limited
Fujitsu, Ltd.
|
| PU3124 PU4124 PU4424 |
V(cbo): 60V; V(ceo): 60V; V(ebo): 5V; 8A; 15W; silicon NPN triple-diffused planar darlington type power amplifier
SILICON NPN TRIPLE-DIFFUSED PLANAR DARLINGTON TYPE, POWER AMPLIFIER, SWITCHING
|
Panasonic Semiconductor
|
| BU2725AF BU2725 |
Silicon Diffused Power Transistor
|
NXP Semiconductors
Philips Semiconductors
|
| BU2527AX |
Silicon Diffused Power Transistor
|
Philips
|
| BUJ103 BUJ103A |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUT211X |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHE13007 BU2722AF |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHE13003 PHE13003AU |
Silicon Diffused Power Transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
