PART |
Description |
Maker |
MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS 7 E-FET High Energy Power FET From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
NID5003NT4 NID5003N |
Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N-Channel, DPAK Self-Protected FET with Temperature and Current Limit(带温度和电流限制的自保护FET) 42 V, 20 A, Single N−Channel, DPAK 20 A, 42 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET Self-Protected FET with Temperature and Current Limit(甯?俯搴???垫???????淇??FET)
|
ONSEMI[ON Semiconductor]
|
PHP160NQ08T PHB160NQ08T |
CAP 0.1UF 100V 10% X7R AXIAL TR-14 75 A, 75 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET N-channel TrenchMOS standard level FET N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
IRFU420B IRFR420B IRFU420BTU IRFR420BTM IRFR420BTF |
500V N-Channel B-FET / Substitute of IRFR420 & IRFR420A 500V N-Channel B-FET / Substitute of IRFU420 & IRFU420A 500V N-Channel MOSFET 2.3 A, 500 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor] International Rectifier Fairchild Semiconductor, Corp.
|
2SK735 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET 快速切换N沟道功率MOS FET
|
NEC, Corp. NEC[NEC]
|
SFR9024 SFU9024 SFS9520 SFR9024TF SFR9024TM SFU902 |
Avalanche Rugged Technology Advanced Power MOSFET 60V P-Channel A-FET / Substitute of IRFR9024 60V P-Channel A-FET / Substitute of IRFU9024
|
FAIRCHILD[Fairchild Semiconductor]
|
SSW1N60B SSI1N60B SSI1N60BTU SSW1N60BTM |
600V N-Channel B-FET / Substitute of SSW1N60A 500V N-Channel B-FET / Substitute of SSI1N60A 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|