| PART |
Description |
Maker |
| BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL
Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| SPP80N03S2L-03 SPB80N03S2L-03 SPI80N03S2L-03 |
80 A, 30 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.8mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 3,1 mOhm
|
INFINEON[Infineon Technologies AG]
|
| BUZ32 BUZ32SMD |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 9.5A, NL
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.4 Ohm, 9.5A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPU30P06P SPD30P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 75m
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BUZ30ASMD |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.13 Ohm, 21A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPI47N10L SPP47N10L SPB47N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=26mOhm, 47A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPD35N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=45mOhm, 35A, NL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| IPB15N03L IPP15N03L 15N03L |
IPP15N03L
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42A, LL
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 12.9mOhm, 42A, LL
OptiMOS Buck converter series
OptiMOS Buck converter series
|
INFINEON[Infineon Technologies AG]
|
| IPU07N03LA |
OptiMOS®2 - Power packages
OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ？的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员？
|
Infineon
Toshiba, Corp.
|
| ADP194ACBZ-R7 ADP194CB-EVALZ |
Logic Controlled, High-Side Power Switch Low RDSON of 80 mΩ at 1.8 V
|
Analog Devices
|
| IPB04N03LA IPP04N03LA IPI04N03LA |
OptiMOS 2 Power-Transistor
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 4.2mOhm, 80A, LL
OptiMOS®2 - Power packages
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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