| PART |
Description |
Maker |
| IRFBG20 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET? Power MOSFET
Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A)
|
IRF[International Rectifier]
|
| IRFM9240 JANTXV2N7237 JANTX2N7237 |
POWER MOSFET THRU-HOLE (TO-255AA)
POWER MOSFET THRU-HOLE (TO-257AA)
POWER MOSFET THRU-HOLE (TO-256AA)
|
International Rectifier
|
| IRFPG40 |
4.3 A, 1000 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
Power MOSFET(Vdss=1000V, Rds(on)=3.5ohm, Id=4.3A)
|
IRF[International Rectifier]
|
| IRFPG40 |
4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| IRF7F3704 |
HEXFET? POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL
HEXFET㈢ POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL
|
IRF[International Rectifier]
|
| STU7NB100 6508 |
N - CHANNEL 1000V - 1.2 - 7.3A - Max220 PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| STP3NB100FP |
3 A, 1000 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL 1000V - 5.3 OHM - 3A - TO-220/TO-220FP POWERMESH MOSFET
|
STMICROELECTRONICS
ST Microelectronics
|
| IRHY593034CM IRHY597034CM IRHY597034CM-15 |
18 A, 60 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
Simple Drive Requirements
|
International Rectifier
|
| FQD2N100 FQU2N100 FQU2N100TU FQD2N100TF FQD2N100TM |
1000V N-Channel QFET
1000V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
