| PART |
Description |
Maker |
| FLL107ME |
L-BAND MEDIUM & HIGH POWER GAAS FET
|
Fujitsu Microelectronics
|
| FLU35XM |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL600IQ-3 |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLL300IL-2 FLL300IL-3 |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLL400IP-2 |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET
|
Fujitsu Media Devices Limited
|
| FLU17ZM |
From old datasheet system
L-Band Medium & High Power GaAs FET
|
Fujitsu Microelectronics
Fujitsu Component Limited.
|
| RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| SST11LP1210 SST11LP12-QCF SST11LP12-10 |
4.9-5.8 GHz High-Linearity Power Amplifier
4900 MHz - 5800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Silicon Storage Technology, Inc
Microchip Technology Inc.
Silicon Storage Technol...
|
| RF3223 |
HIGH LINEARITY/DRIVER AMPLIFIER 500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
RF Micro Devices, Inc.
|
| DMJ2502-000 DME2029-000 |
Beam-Lead Ring Quad, N-Type Low, Medium, High Drive Schottky Diodes, Frequency Band S, C
Beam-Lead Bridge Quad, N-Type Low, Medium, High Drive Schottky Diodes, Frequency Band S, C
|
Skyworks Solutions
|
