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2N5064 - Thyristor sensitive gate

2N5064_189180.PDF Datasheet

 
Part No. 2N5064
Description Thyristor sensitive gate

File Size 17.45K  /  4 Page  

Maker


NXP Semiconductors
Philips Semiconductors



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Part: 2N5064
Maker: MOTOROLA
Pack: TO-92
Stock: Reserved
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2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 Thyristor .8A 100V
Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92
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ONSEMI[ON Semiconductor]
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SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:60V; On-State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:8A; Gate Trigger Current Max, Igt:200uA
HIROSE[Hirose Electric]
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MAC4DLM-D MAC4DLM-1G Sensitive Gate Triacs; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC
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BD139-25 BD135-25 BD137-25 Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-126
Diac Thyristor; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Package/Case:Axial Leaded; Peak Surge Current:2A; Breakover Voltage Min:30V RoHS Compliant: Yes 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1.5AI(丙)|126
HIROSE ELECTRIC Co., Ltd.
BD828-10 BD826-6 BD826-16 BD830-10 SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-202
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 1.5AI(丙)|02
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BD140-25 BD136-25 BD138-25 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-126
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:3mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 80V的五(巴西)总裁| 1.5AI(丙)|126
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Sensitive Gate Triacs; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Reel; Qty per Container: 2000 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92
Sensitive Gate Triacs; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 5000 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92
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