| PART |
Description |
Maker |
| TC58256FT |
256-MBIT (32M x 8BITS) CMOS NAND EEPROM
|
Toshiba Semiconductor
|
| TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
| TC58V64BDC |
64-MBIT (8M x 8 BITS) CMOS NAND E PROM (8M BYTE SmartMedia )
64-MBIT (8M 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
64-MBIT (8M x 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| TC58NS512DC |
512-MBIT (64M x 8 BITS) CMOS NAND E 2 PROM (64M BYTE SmartMedia TM)
|
TOSHIBA
|
| TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| PM39F020-70JCE PM39F020-55PCE PM39F020-55JCE PM39F |
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory 1兆位/ 2 4兆位5伏，只有闪存的CMOS
|
PMC-Sierra, Inc.
|
| TC58A040F |
4 MBIT (4M x 1BITS) CMOS AUDIO NAND E2PROM
|
Toshiba Semiconductor
|
| PM39F010 PM39F010-55JCE PM39F010-55PCE PM39F010-70 |
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory
|
PMC[PMC-Sierra, Inc]
|
| DD28F032SA DD28F032SA-080 DD28F032SA-070 DD28F032S |
32-MBIT (2 MBIT X 16/ 4 MBIT X 8) FlashFile MEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFileMEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY 4M X 8 FLASH 12V PROM, 100 ns, PDSO56
|
Intel Corporation
Intel Corp.
PROM
Intel, Corp.
|
| 74LVX03M |
LOW VOLTAGE CMOS QUAD 2-INPUT NAND GATE (OPEN DRAIN)
LOGIC GATE|QUAD 2-INPUT NAND|LVX-CMOS|SOP|14PIN|PLASTIC 逻辑门|输入与非| LVX全CMOS |专科| 14PIN |塑料
|
SGS Thomson Microelectronics
Bourns, Inc.
|
