PART |
Description |
Maker |
MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET 2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
|
MRF7S21170H |
2110?2170 MHz, 50 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs From old datasheet system
|
Motorola Semiconductor Products
|
MRF5S21130R3 MRF5S21130SR3 |
2170 MHz, 28 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
BLD6G22L-50 BLD6G22LS-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
|
NXP Semiconductors
|
SI-5R2.140G-T |
2110 MHz - 2170 MHz RF/MICROWAVE ISOLATOR
|
HITACHI METALS LTD
|
PTF210901 PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
MRF21180 |
MRF21180, MRF21180S 2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
MRF21010 |
MRF21010R1, MRF21010LSR1 2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs
|
Motorola
|
PTAC210802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
PTFA210601E PTFA210601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
MRF6S21100NBR1 MRF6S21100N |
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz
|
Freescale Semiconductors
|
PTFB213004F |
High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz
|
Infineon Technologies AG
|