| PART |
Description |
Maker |
| MTP3N120E_D ON2600 MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
|
ON Semiconductor
|
| MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM
From old datasheet system
|
ON Semiconductor
ETC
Motorola, Inc
|
| MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTM50N05E MTM50N05 |
TMOS IV POWER FIELD EFFECT TRANSISTORS
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MTW8N50E |
TMOS E FET POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC
Motorola, Inc
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MGSF3454VT1 MGSF3454VT1_D ON1906 MGSF3454VT1-D ON1 |
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA INC
|
| MTE50N50 |
(MTE50N45 - MTE60N40) POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS
|
Motorola
|
