| PART |
Description |
Maker |
| 2SA965 2SA965O 2SA965Y |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | TO-92VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1648 2SA1648-Z 2SA1648-Z-T2 2SA1648-Z-T1 2SA164 |
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
PNP epitaxial type silicon transistor
|
NEC Corp.
|
| 2SB1016AY 2SB1016AO 2SB1016A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB
|
TOSHIBA
|
| HN1B01FU HN1B01FUGR |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 2SA2102 |
Silicon PNP epitaxial planar type 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Panasonic, Corp.
Panasonic Semiconductor
|
| HN1A01FU E001966 |
Silicon PNP Transistor
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
N/A
Toshiba Semiconductor
|
| 2SA1358Y 2SA1358 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1A I(C) | TO-126VAR 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 1A条一（c）|26VAR
|
TOSHIBA
|
| 2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
IRC Advanced Film
NEC[NEC]
|
