PART |
Description |
Maker |
MT58L256L3 MT58L256L32D |
8Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,
|
MICRON
|
MT58L512L18D |
(MT58Lxxxx) 8Mb SYNCBURST SRAM
|
Micron Semiconductor
|
MT58L512L18F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology, Inc.
|
IC61S25636T IC61S25636D IC61S25632T IC61S25632D IC |
8Mb SyncBurst Pipelined SRAM From old datasheet system SYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V1MV18D |
16Mb SYNCBURST?SRAM 16Mb SYNCBURST?/a> SRAM 16Mb SYNCBURSTSRAM 16Mb SYNCBURST?/a> SRAM
|
Micron Technology, Inc.
|
HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0(VDD)在3.0(提供VDDQ)V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
DS3065W-100 DS3065W |
3.3V Single-Piece 8Mb Nonvolatile SRAM with Clock 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, PBGA256
|
MAXIM - Dallas Semiconductor Maxim Integrated Products, Inc.
|
DS1265W-100IND |
3.3V 8Mb Nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
|
IC61SF12836 IC61SF12832 IC61SF12832-7.5B IC61SF128 |
SYNCHRONOUS STATIC RAM, Flow Through 128K x 32 Flow Through SyncBurst SRAM
|
Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc]
|
GS78116B-10 GS78116B-10I GS78116B-12I GS78116B-15 |
512K x 16 8Mb Asynchronous SRAM
|
GSI Technology
|
DS3065WP-100IND |
3.3V, 8Mb, Nonvolatile SRAM with Clock
|
MAXIM - Dallas Semiconductor
|
GS881Z18T-11I GS881Z18T-66I GS881Z36T-80 |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs 512K X 18 ZBT SRAM, 11 ns, PQFP100 8Mb Pipelined and Flow Through Synchronous NBT SRAMs 512K X 18 ZBT SRAM, 18 ns, PQFP100 8Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 36 ZBT SRAM, 14 ns, PQFP100
|
GSI Technology, Inc.
|