PART |
Description |
Maker |
MCM67A518 MCM67A518FN10 MCM67A518FN12 MCM67A518FN1 |
32K x 18 Bit Asynchronous/Latched Address Fast Static RAM
|
MOTOROLA[Motorola, Inc]
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CYD02S36V CYD04S36V CYD09S36V CYD18S36V |
FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步双端口RAM) FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双口RAM(FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步双端口RAM)的
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Cypress Semiconductor Corp.
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27C256 27C256-10 27C256-10EL 27C256-10EP 27C256-10 |
256K (32K x 8) CMOS EPROM 256K (32K x 8) CMOS EPROM 256K2K的8)的CMOS存储 DIODE SCHOTTKY 150V 60A TO247AC CAPACITOR 1500UF 80V ELECT TSHA CAP 270UF 400V ELECT TS-ED From old datasheet system 256K (32x8) CMOS EPROM
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YEONHO Electronics Co., Ltd. Microchip Technology, Inc. Microchip Technology Inc. MICROCHIP[Microchip Technology]
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HN27C256H HN27C256HFP-10T HN27C256HFP-85T HN27C256 |
256K (32K x 8-bit) UV and OTP EPROM, 70ns 256K (32K x 8-bit) UV and OTP EPROM, 85ns 256K (32K X 8-BIT) UV AND OPT EPROM
|
Hitachi Semiconductor
|
AT28C256-15PI AT28C256-15PC AT28C256E AT28C256E-15 |
256K 32K x 8 Paged CMOS E2PROM 256K (32K x 8) Paged CMOS From old datasheet system
|
ATMEL[ATMEL Corporation]
|
MCM67A618B MCM67A618BFN10 MCM67A618BFN12 MCM67A618 |
64K x 18 Bit Asynchronous/ Latched Address Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
AT28BV256-20SU AT28BV25609 |
200NS, SOIC, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 3V, 200 ns, PDSO28 256K (32K x 8) Battery-Voltage Parallel EEPROMs
|
Atmel, Corp. ATMEL Corporation
|
OPB871N51TX OPB871N51TV OPB872N51TV |
256K, 32K X 8, 2.5V SER EE, -40C to 85C, 8-SOIC 150mil, TUBE 256K, 32K X 8, 2.5V SER EE, -40C to 85C, 8-SOIC 208mil, TUBE Photo Gap Detector
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|
IDT71256 IDT71256L IDT71256L100D IDT71256L100DB ID |
Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位) Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28 Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位) CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28 Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28 CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28 Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70 Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70 1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70 Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70 Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70 Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85 Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75 CMOS Static RAM 256k ( 32k X 8-bit )
|
INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Technology, Inc. IDT[Integrated Device Technology] Integrated Device Technolog...
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HN27C256A HN27C256AFP-12T HN27C256AFP-15T HN27C256 |
256K(32K x 8-bit) UV and OTP EPROM 256K (32K x 8-bit) UV and OTP EPROM, 120ns
|
Hitachi,Ltd. Hitachi Semiconductor
|
CY7C1399B-15ZXC CY7C1399B-15ZXI CY7C1399B-15VXC CY |
32K X 8 CACHE SRAM, 20 ns, PDSO28 32K X 8 CACHE SRAM, 12 ns, PDSO28 256K(32K x 8) Static RAM
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CYPRESS SEMICONDUCTOR CORP http://
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