| PART |
Description |
Maker |
| 8CN7 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1
|
General Electric Company
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| M27W401 M27W401-100B6TR M27W401-100F6TR M27W401-10 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SOIC 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-PDIP 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SO 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29W004BT M29W004BT55N6T |
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory 4兆位512KB的8，启动块低压单电源闪
|
ST Microelectronics
STMicroelectronics N.V.
|
| M50LPW040N5T M50LPW040 M50LPW040K M50LPW040K1T M50 |
From old datasheet system
4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory
4 MBIT (512KB X8, UNIFORM BLOCK) 3V SUPPLY LOW PIN COUNT FLASH MEMORY
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| CY7C1012DV33-10BGXI |
12-Mbit (512K X 24) Static RAM; Density: 12 Mb; Organization: 512Kb x 24; Vcc (V): 3.0 to 3.6 V; 512K X 24 STANDARD SRAM, 10 ns, PBGA119
|
Cypress Semiconductor, Corp.
|
| M29F400BB45N1 M29F400BB45N1T M29F400BB45N3 M29F400 |
4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Dual Precision Low-Power Single Supply Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Automotive Catalog Excalibur High-Speed Low-Power Precision Operational Amplifiers 8-SOIC -40 to 125 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x8256Kb的x16插槽，启动座单电源闪
Excalibur High-Speed Low-Power Precision Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
High-Speed, Low-Power, Precision Single Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Excalibur High-Speed Low-Power Precision Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
72-Mbit DDR-II SRAM 2-Word Burst Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
Fuse
256K (32K x 8) Static RAM
64/256/512/1K/2K/4K x 18 Synchronous FIFOs
Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs
Neuron® Chip Network Processor
64-Kbit (8K x 8) Static RAM
72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
| LPC1774FBD208 LPC1776FBD208 LPC1778FBD208 LPC1777F |
128kB flash, 40kB SRAM, USB, LQFP208 package
256kB flash, 80kB SRAM, Ethernet, USB, LQFP208 package
512kB flash, 96kB SRAM, Ethernet, USB, LQFP208 package
512kB flash, 96kB SRAM, USB, LQFP208 package
512kB flash, 96kB SRAM, Ethernet, USB, LCD, LQFP144 package
512kB flash, 96kB SRAM, Ethernet, USB, LCD, LQFP208 package
512kB flash, 96kB SRAM, Ethernet, USB, LCD, TFBGA208 package
512kB flash, 96kB SRAM, Ethernet, USB, LQFP144 package
512kB flash, 96kB SRAM, Ethernet, USB, TFBGA208 package
|
NXP Semiconductors
|
| M59DR008 M59DR008E M59DR008E100N1T M59DR008E100N6T |
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M27C400 6674 M27C400-80XF6TR M27C400-100B1TR M27C4 |
AML42 Series, Solid State Indicator, Square, Compact Style, Lighted, 1 LED, Snap in panel mount 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM
From old datasheet system
|
Advanced Micro Devices, Inc.
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
