| PART |
Description |
Maker |
| K4J55323QG K4J55323QG-BC12 K4J55323QG-BC14 K4J5532 |
256Mbit GDDR3 SDRAM
|
Samsung semiconductor
|
| K4J55323QF-GC20 K4J55323QF-GC K4J55323QF-GC14 K4J5 |
256Mbit GDDR3 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| K4J52324QC K4J52324QC-BJ12 K4J52324QC-BC20 K4J5232 |
512Mbit GDDR3 SDRAM 512MB的GDDR3 SDRAM
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V53C1256162VAUS7IPC V53C1256162VAUT8IPC V53C125616 |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 256Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16x 16
|
Electronic Theatre Controls, Inc.
|
| V54C3256164VS V54C3256164VT V54C3256404VS V54C3256 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
3.3V, 2K refresh ultra-high performance 1M x 16 SDRAM 2 banks x 512Kbit x 16
|
Mosel Vitelic Corp
|
| HY5RS573225F-12 HY5RS573225F-13 HY5RS573225F-14 HY |
GDDR3 SDRAM - 256Mb
|
Hynix Semiconductor
|
| M65KG256AB8W8 |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| V54C3256164VAT V54C3256164VBT V54C3256404VB V54C32 |
256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| HYB18H256321BF-10 HYB18H256321BF-11 HYB18H256321BF |
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM
|
http://
Qimonda AG
|
| HYB18H1G321AF HYB18H1G321AF-10_11_14 |
GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM
|
Qimonda AG
|
| HYB18H512321BF-08_10 HYB18H512321BF HYB18H512321BF |
512-Mbit GDDR3 Graphics RAM
|
Qimonda AG
http://
|
