| PART |
Description |
Maker |
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| 2SK2006 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
HVX Series Power MOSFET 900 Volts 5 Amp
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Shindengen Electric Mfg. Co., Ltd.
|
| MRFIC0913 |
900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
|
| NCP1081 NCP1081DEG NCP1081DER2G |
Integrated 40 W High Power PoE-PD & DC-DC Converter Controller (IEEE 802.3at Draft 3.0) SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO20
Integrated High Power PoE-PD Interface & DC-DC Converter Controller
|
ON Semiconductor
|
| EDI8F32259C35MNC EDI8F32259C35MMC EDI8G32259B12MZC |
High Speed, Single Channel, Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-PDIP
x32 SRAM Module
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R X32号的SRAM模块
|
Integrated Device Technology, Inc.
Samsung Semiconductor Co., Ltd.
|
| EDI8F32256C EDI8F32256C-MN EDI8G32256C-MM |
256Kx32 Static RAM CMOS, High Speed Module(256Kx32高速CMOS静态RAM模块)
SRAM Modules
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R SRAM模块
|
White Electronic Designs Corporation
3M Company
|
| IP2005ATRPBF |
High Frequency Synchronous Buck Optimized LGA Power Stage with Integrated Power Semiconductors, Driver IC, & Passives
|
International Rectifier
|
| ISL6540ACRZA-T |
Single-Phase Buck PWM Controller with Integrated High Speed MOSFET Driver and Pre-Biased Load Capability; Temperature Range: 0°C to 70°C; Package: 28-QFN T&R 4 A SWITCHING CONTROLLER, 2000 kHz SWITCHING FREQ-MAX, PQCC28
|
Intersil, Corp.
|
| AWT921 |
From old datasheet system
900MHz Integrated Power Amp
The AWT921 is a monolithic amplifier for use in communication systems that require high gain and output intercept point.
|
ANADIGICS, Inc.
Anadigics Inc
|
| PTFA081501E PTFA081501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz
|
Infineon Technologies AG
|
| SDR939/61 SDR936-61 SDR938/61 SDR936/61 |
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-61
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 800 V, SILICON, RECTIFIER DIODE, TO-61
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 900 V, SILICON, RECTIFIER DIODE, TO-61
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| MRFIC2004 |
900 MHz DRIVER & RAMP SILICON MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
MOTOROLA[Motorola Inc]
|
