| PART |
Description |
Maker |
| F20S6N-4100 |
20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| STS8C5H30L S8C5H30L |
From old datasheet system
N-CHANNEL 30V -0.018 Ohm - 8A - P-CHANNEL 30V - 0.045 Ohm - 5A - SO-8 LOW GATE CHARGE STRIPFET III MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MTD20N06HD MTD20N06HD_D ON2484 |
From old datasheet system
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| STP210NF02 STB210NF02-1 STB210NF02 8543 STB210NF02 |
N-CHANNEL 20V - 0.0026 ohm - 120A D?PAK/I?PAK/TO-220 STripFETII POWER MOSFET
N-CHANNEL 20V - 0.0026 ohm - 120A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET
N-CHANNEL 20V - 0.0026 ohm - 120A D2PAK/I2PAK/TO-220 STripFET?/a> II POWER MOSFET
N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
From old datasheet system
N-CHANNEL 20V - 0.0026 ohm - 120A D?PAK/I?PAK/TO-220 STripFET⑩ II POWER MOSFET
N-CHANNEL 20V - 0.0026 OHM - 120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STS2DPFS20V 2DPFS20V |
P-CHANNEL 20V - 0.14 OHM - 2.5A SO-8 2.7V DRIVE STRIPFET II MOSFET PLUS SCHOTTKY DIODE
P-CHANNEL 20V - 0.14 ohm - 2.5A SO-8 2.7V-DRIVE STripFETII MOSFET PLUS SCHOTTKY DIODE
P-CHANNEL 20V - 0.14 OHM - 2.5A SO-8 2.7V DRIVE STRIPFET II MOSFET PLUS SCHOTTKY DIODE
P-CHANNEL 20V - 0.14 ohm - 2.5A SO-8 2.7V-DRIVE STripFET⑩ II MOSFET PLUS SCHOTTKY DIODE
P-CHANNEL 20V - 0.14 ohm - 2.5A SO-8 2.7V-DRIVE STripFET II MOSFET PLUS SCHOTTKY DIODE
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| BUZ345 BUZ345C67078-S3121-A2 |
Single-chip ZigBee® 802.15.4 solution
SIPMOS Power Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, TO-218, RDSon=0.045 Ohm, 41A, NL
|
INFINEON[Infineon Technologies AG]
|
| H7N1004AB |
30 A, 100 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| APT20M45SVR |
POWER MOS V 200V 56A 0.045 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| IRLR3714PBF IRLU3714PBF IRLR3714TRRPBF IRLR3714TRP |
High Frequency Isolated DC-DC
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20m楼? , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mΩ , ID = 36A )
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| STS5PF20V |
P-CHANNEL 20V - 0.065 OHM - 5A SO-8 2.5V-DRIVE STRIPFET™ II POWER MOSFET
P-CHANNEL 20V - 0.065 ohm - 5A SO-8 2.5V-DRIVE STripFET II POWER MOSFET
|
ST Microelectronics
STMicroelectronics
意法半导
|
