| PART |
Description |
Maker |
| MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Microsemi, Corp.
|
| RF-5800V-V500 RF-5800V-VS501 |
FALCON II VHF POWER AMPLIFIER
|
Harris Corporation
|
| S-AV36A |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 80-W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| 2SC2178 |
VHF Band Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC2118 |
VHF BAND POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| NE55410GR NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
NEC
|
| 55410 NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Laboratories
|
| MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| S-AV28 |
VHF Band HAM FM RF Power Amplifier Module
|
Toshiba
|
| S-AV35 SAV35 |
FM RF POWER AMPLIFIER MODULE for VHF MARINE BAND
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2638 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA
|
