| PART |
Description |
Maker |
| 1MBI600PX-140-03 |
800 A, 1400 V, N-CHANNEL IGBT
IGBT MODULE
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| GP801DCM18 |
B Series/ Female Solder 800 A, 1800 V, N-CHANNEL IGBT
Hi-Reliability Chopper Switch Low VCESAT IGBT Module
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| IXBH20N140 IXBH20N160 |
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor 20 A, 1400 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
IXYS Corporation
|
| CM800E2Z-66H CM8.0E2Z-66H |
800 A, 3300 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| CGHV14800F-AMP CGHV14800-TB |
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE
IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| MID100-12A3 MID200-12A4 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT
IGBT Modules - Short Circuit SOA Capability Square RBSOA 270 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp.
|
| HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STB18NM80 STF18NM80 STP18NM80 STW18NM80 |
N-channel 800 V, 0.25 Ω, 17 A, MDmes Power MOSFET
N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages
|
STMicroelectronics
|
| MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| APT22F80B APT22F80S |
N-Channel FREDFET
Power FREDFET; Package: TO-247 [B]; ID (A): 23; RDS(on) (Ohms): 0.43; BVDSS (V): 800; 23 A, 800 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation
Microsemi, Corp.
|
|
